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Symposium II: Lithography and Patterning

Symposium II: Lithography and Patterning

Virtual Conference Registration
  • Conference Agenda
  • CSTIC 2023 Call for Papers

Opening Remarks

  • Oral Session

  • Poster Session

  • How Process, Equipment, Material, Computation that work together to make up the Performance of Photolithography

    Qiang Wu

    Fudan University

    Novel Etch Solution with Sym3 for Logic BEOL Patterning Etch Applications

    Hui Sun

    Applied Materials

    New Materials and New Functionalities Co-work scaling, and the Exploration of Inner Spacer Technique

    David Xiao

    Qianmo Micros Design LLC

    Recent progress of EUV Chemically Amplified Resist with Negative-Tone Development (CAR-NTD) for improving Chemical Stochastic

    Toru Fujimori

    FUJIFILM Corporation

    Acid Generation Efficiency Prediction by Bond Cleavage Calculation of EUV Photoacid Generators

    Jayoung Koo

    DuPont

    High-efficient nanofocusing for nanopattern with a plasmonic BNA

    Dandan Han

    University of Chinese Academy of Sciences

    From Tape to Mirrors: 50 Years of Progress in Photomask Technology

    Chris Progler

    Photronics

    The Influence of Coma aberration on 193 nm immersion (193i) lithography process window

    Yanli Li

    Fudan University

    Polyimides for Power Device Applications

    Masao Tomikawa

    Toray Industries Inc

    Inverse lithography with adaptive mask complexity

    Xiaoxuan Liu

    Guangdong University of Technology

    Mask Corner Rounding in OPC Modeling

    Weimei Xie

    National Integrated Circuit Innovation Center (NICIC)

    A Study of the Via Pattern Lithography Process Window under the 7 nm Logic Design Rules with 193 nm Immersion Lithography

    Jinhao Zhu

    Fudan University

    A Study of Flexible BEOL Design Rules Allowing Degreed Slanted Interconnection in Advanced Nodes

    Xianhe Liu

    Fudan University

    Research on Cross-Level Interconnection of Metal Layers under 193 Immersion Lithography Conditions

    Ying Li

    National Integrated Circuit Innovation Center (NICIC)

    A Study of the Minimum Area Rule under the 193 nm Immersion Lithography for Via and Cut Patterns

    Qiang Wu

    Fudan University

    The Spin-on Multi-Layer Material Status for Advanced Device

    Satoshi Dei

    JSR Electronic Materials (Shanghai)

    Enhancing High-throughput and High-precision CD-SEM Metrology Through Advanced Deep Learning-Based Image Processing

    Bo Wang

    Hitachi High-Tech Corporation

    Correlation Between CD/LWR and Focus Level Fitting Error: A Process Quality Indicator

    Tianhao Huang

    Zhejiang University

    The Impact of Wafer Warpage-Induced Unevenness on Alignment

    Pan Liu

    Zhejiang University

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