Advancing 3D Nano-electronic Systems through Innovations in BEOL-Compatible Oxide Semiconductor Technology
Gong Xiao
National University of Singapore, Singapore
Symposium VIII: MEMS, Sensors and Emerging Semiconductor Technologies
Symposium VIII: MEMS, Sensors and Emerging Semiconductor Technologies
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Heterogeneous Integration XOI materials and devices
Xin Ou
Shanghai Institute of Microsystem and Information Technology, China
Si based GeSn materials and devices
Chuanbo Li
Minzu University of China, China
Antimonide semiconductor material for infrared sensing
Donghai Wu
Institute of Semiconductors, China
Lamb Acoustic Wave Devices: Ready for Prime Time Applications and Challenges?
Songbin Gong
Spectron Tech, C4hina/UIUC, USA
Controllable preparation of wafer-scale two-dimensional van der Waals heterostructures
Libo Gao
Nanjing University, China
Atomically sharp interface of van der Waals heterostructures enabled high-performance electronic devices
Lihong Bao
Institute of Physics, Chinese Academy of Sciences
NOEMS based on vdW heterostrucutres
Zheng Han
Shanxi University, China
High-mobility 2D P-type semiconductor materials
Xiang Chen
Nanjing University of Science & Technology, China
Universal Materials and Device Integration Technology for Future Chips
Chen Wang
Tsinghua University, China
A Graphene Field Effect Transistor (GFET) based Integrated Biosensor System For Point-Of-Care Application
Ziyang Zhu
Fudan University, China
A GHz Silicon-based Width Extensional Mode MEMS Resonator with high Q
Jinling Yang
Institute of Semiconductors, Chinese Academy of Sciences
MEMS Acoustic Device
Songsong Zhang
Chengdu Xiansheng Technology/SITRI, China
TSV INTEGRATED and Pattern Recognition based Multimode Degenerated Low-power 3-dimensional Smart sensing chips
Simian Zhang
Tsinghua University, China
SPAD-based line sensor IC for chemiluminescence assays in microfluidic channels
Alexander Zimmer
X-FAB Global Services GmbH, Germany
Newly developed low-reflectivity black resist with high optical density
Hiroaki Idei
FUJIFILM Corporation, Japan
UV-C Light Detection with High Performance Photodiodes Integrated in a 0.18 µm Modular CMOS Foundry Technology
Daniel Gäbler
X-FAB Global Services GmbH, Germany
