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Symposium V: CMP and Cleaning

Symposium V: CMP and Cleaning

Virtual Conference Registration
  • Conference Agenda
  • CSTIC 2026 Call for Papers

Opening Remarks

  • Oral Session

  • Poster Session

  • Grinding and Chemical Mechanical Polishing Applications in Advanced Packaging

    Xinchun Lu

    Hwatsing Technology Co.,Ltd

    Analysis of thermal effects in chemical mechanical planarization (CMP)

    Taesung Kim

    Sungkyunkwan University

    Application of ultra-low SG hard pad in CMP

    Yijie Luo

    HUBEI DINGLONG CO.LTD.

    Backside Chipping improvement Study On Hybrid Bonding Process

    Liang Tian

    Semiconductor Manufacturing North China ( Beijing ) Corp ,China

    A Novel Dynamic Hypergraph Attention Framework for The Prediction of Removal Rate in Chemical Mechanical Polishing Process

    Zhenxiang Huang

    China University of Mining & Technology-Beijing

    Challenges and Solutions of Wet Processes in Semiconductor Manufacturing

    Chen Chao

    Beijing NAURA Technology Group Co., Ltd.

    The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process

    Yu Li

    ACM

    Post Metal CMP Cleaning Technology Processes and Materials

    Guanghong Luo

    Yantai Xianhua Polymer Materials Ltd.

    Improvement of W CMP Erosion Defect and Planarization Performance

    Yu Yao

    Semiconductor Technology Innovation Center (Beijing) Corporation, Beijing, China

    RTPC X Pre-Thickness Control Function on Metal CMP Process

    Mingtao Luo

    Applied Materials

    Effect of Sulfur-Containing Corrosion Inhibitors on the Selection Ratio of Removal Rate for Ruthenium Based Copper Interconnects

    Zheng Wu

    Hebei University of Technology

    Uniformity and Defect Improvement in Dielectric CMP with Pad Dressing Optimization

    Yu Yang

    Shanghai Huali Integrated Circuit Corporation

    How to Reduce Retaining Ring Wear

    Jialiang Huang

    Anji Microelectronics Technology (Shanghai) Co., Ltd.

    Mesoporous CeO2 Particle Abrasives with High Specific Surface Area for Enhanced Chemical Mechanical Polishing Performance

    Wei Yuan

    Fudan University

    A wafer-level CMP multi-physics modeling for IC manufacturing

    Zhiwei Zhang

    Zhejiang University

    Effect of Surfactants on the Properties of C-, A- And M-Plane Sapphire CMP

    Bin Hu

    Hebei University of Technology

    Study on the efficiency enhancement of chemical mechanical polishing of gallium nitride by acetic acid

    Wenhao Xian

    Hebei University of Technology

    Study on the enhancement of surface quality of polyimide films by chemical mechanical polishing

    Yafei Yin

    Hebei University of Technology

  • Study On the Removal Rate and Electrochemical Corrosion of Titanium in Chemical Mechanical Polishing

    Ziyi Cao

    Hebei University of Technology

    The Novel Strategy of Pattern Gate High Loading Controlling in ILD0 CMP Process

    Shuxiang Wang

    Shanghai Huali Integrated Circuit Corp

    Application and Improvement of CU CMP Thickness Control Method Based on R2R System

    Cheng Liu

    Shanghai Huali Integrated Circuit Corporation

    Study of Metal Film Thickness on Endpoint Detection in Chemical Mechanical Polishing (CMP)

    Cheng Liu

    Shanghai Huali Integrated Circuit Corporation

    Study on the influence of surfactant concentration on the planarization effect of quartz wafers

    Zian Ba

    Hebei University of Technology

    Application and mechanism research of novel green chelating agent in CMP

    Lijun Dong

    Hebei University of Technology

    Hybrid Bonding Cu CMP Process Development

    Yongbin Wei

    Applied Materials

    Investigation of Fe-Complex Catalysts in Tungsten Chemical Mechanical Polishing (CMP) with Passivation Layer Formation and Hydroxyl Radical Generation

    Hyunho Kim

    Sungkyunkwan University

    Effect Of Green Surfactant ADS On Properties Of COPPER CMP SLURRY

    Jiahui Li

    Hebei University of Technology

    Pad physical properties Effects on Removal Rate in a STI Ceria CMP Process

    Jitao Chen

    Shanghai Huali Integrated Circuit Corporation

    Study On the Relationship Between Transmittance and Polish Time

    Wangbing Li

    Shanghai Huali Integrated Circuit Corporation

    N28 Tech Node Metal CMP Profile Uniformity and Defectivity Improvement by RTPC-X MPC and JMP DOE Analysis

    Likun Cheng

    Applied Materials (China) Inc

    RTPC X and RTPC XE application on Cu CMP

    Yifeng Zheng

    Applied Materials

    Innovative Process Development on Wafer Quality & Throughput in SiC CMP

    Zhenxing Song

    Applied Materials (China)

    STI CMP Uniformity Improvement by WIW iAPC

    Yuan Li

    Applied Materials

    CU CMP 65nm intermetal residue issue solution

    Ben Gu

    Applied Materials

    FullVision Endpoint System Application on Thick Dielectric Film CMP Uniformity Control

    Weihan Zhu

    Applied Materials

    Improvement of UTM CU CMP Uniformity by RTPC-X Endpoint System

    Mingzheng Han

    Applied Materials

    28nm SOI Tungsten CMP HDF step low range of post thickness achieved by RTPC X

    Wanli Xing

    Applied Materials

    Accurate Profile Control of CMP Pad During Polishing Process

    Yanjun Yu

    Applied Materials

    A Novel Cu Barrier CMP Process Tuning Study for Throughput Improvement

    Jiaming Xu

    Applied Materials (China)

    Excellent Particle Performance with Brush Gap Optimization in Wafer House CMP Process

    Qiang Chen

    Applied Materila China

    Use Damascus CMP to fabricate IGZO transistor in advanced Dram technology

    Ming Zeng

    Beijing Superstring Academy of Memory Technology

    Poly CMP Surface Particle Improvement CIP

    Tao Ni

    Applied Materials (China), Inc.China

    28HKMG STI inline performance improvement with FVXE application in

    Mengyao Liu

    Applied Materials

    LK Defect improvement CIP in high-end wafer house product

    Siyuan Pang

    Applied materials

    FullVision™ NIR Endpoint for Si CMP TTV improvement

    Haodong Huang

    Applied materials

    The Effective Method of Cu Defect Improvement with New CIP Head Wash Nozzle

    Mengxia Li

    Applied material

    OX and Cu selectivity Investigation on Cu CMP

    Kun Zhang

    Applied Materials China

    HPPC Close Loop Control for FEOL CMP Process Stability and Productivity Improvement

    Na Xiao

    Applied Materials China

    New optimized method to Slurry Arm for Metal RR NU Improvement Weiguo_Wang@amat.com

    Weiguo Wang

    Applied Materials

    Cu defect improvement with BB2.0 function

    Kewen Wang

    Applied Materials China

    Cu IM CMP Rs Control Capability Improvement

    Youlai Xiang

    Applied Materials China

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