Advancing to the Next Node and Competing Globally Using Virtual Fabrication
Joseph Ervin
Lam Research
Symposium IV: Thin Film, Plating and Process Integration
Symposium IV: Thin Film, Plating and Process Integration
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Advanced Memory and Logic Patterning Trends and Applied Material’s solutions to meet the Technical Challenges
Dimitri Kioussis
Applied Materials
Mechanism of reverse leakage current in Schottky diodes involving velocity overshoot
Wai Shing Lau
Nanyang Technological University
Developments of Improving STI Formation and Quality by Annealing for 28nm CMOS Technology Node & Beyond
Yan Sun
NAURA, Beijing
Investigation of Physical Properties and Thermal Stability of Ultra-Thin TiN/HfO2 Film Stack Prepared by Atomic Layer Deposition
Wu qingqing
ICRD
Mechanism B I-V Symmetry for MIM Capacitors Used in Microelectronics
Wai Shing Lau
Nanyang Technological University
Optimization for Thick Oxide Deposition in 3D NAND Application
Shasha Wang
Applied Materials
Monolithic Integration of Thin Film Photodiode with CMOS Technology for Infrared Imaging Applications
Yunlong Li
IMEC
Machine Learning Assisted In-situ Sensing and Detection on System of PECVD Depositing Hydrogenated Silicon Films
Yu-Pu Yang
National Central University
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Investigation on Channel Plasma Effect in Doped Tin-Oxide Thin-Film Transistors Using Experiments and Simulation
Zong-Wei Shang
Xiamen University
AMAT HDP-CVD IMD Particle Reduction and Mechanism
Tengfei Zhang
Applied Materials (China), Inc.
A Novel AMAT Helium Free Producer GT PETEOS Process to Reduce CoO
Wei Xia
Applied Materials (China), Inc.
Optimization of Selective Inhibition for Void-Suppressed Tungsten Gap-fill
Xin Gan
Lam Research
Optimization of Clean Recipe for Producer GT RPS and Clean Efficiency
Xiang Li
Applied Materials
Optimization of SiGe Selective Epitaxial Growth for Sdvanced FDSOI Technology
Yongyue Chen
HLMC
A Novel Method to Mitigate TiN Chlorine Residues in DRAM
Guangyao Shen
Applied Materials
Modified Pre-clean Chamber for Via Rc and CuBS System Throughput Improvement
Caimin Meng
Applied Materials China
Cirrus HTX TiN Metal Hardmask for 14nm FinFET BEOL Application
Pingyuan Lu
Applied Materials China. Shanghai. China
AMAT SALD W for high AR via gap fill application
Qingjun Ni
Applied Materials
A Study of Post-Clean N2O Plasma Treatment for PECVD High Stress Silicon Oxide Film Thickness Uniformity Stability Improvement
Min Shudi
Lam Research Service Co. Ltd.
Applied Endura® Fluorine Free W Application for Low Metal Gate Resistance
Subo Cao
Applied Materials China
Selective Tungsten Deposition for 7nm and Beyond Contact Via Fill
Ning Ma
Applied Materials China
Applied Endura® ALD TiSiN for Advanced Metal Gate Barrier Application
Ze Yuan
Applied Materials
Influence of Different Pressures on Characteristics of Plasmas in PECVD Chamber
Xingyu Li
Jiangsu Normal University
Structural and Electrical Properties of Ti-C Thin Films for Metal Gate
Kamale Tuokedaerhan
Xinjiang University
Investigation of the optical properties of a-Si:H films deposited by PECVD using various experimental techniques
Yudong Zhang
Jiangsu Normal University
Good sensitivity and high stability of NaTaO3 humidity sensor
Min Zhang
Xinjiang University
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