导航

浏览

  • 首页
  • 中国国际半导体技术大会
  • 大讲堂
  • 招聘
首页 中国国际半导体技术大会 大讲堂 招聘
English
Richard Ali
  • 个人中心
  • Night mode
  • 退出
登录

账号密码登录

没有账号 去注册 CSTIC预登记号登录

找回密码

注册账号

已有账号 去登录

CSTIC预登记号登录

没有账号 去注册 账号密码登录

Symposium V: CMP and Post-Polish Cleaning

Symposium V: CMP and Post-Polish Cleaning

Virtual Conference Registration
  • Download Agenda
  • CSTIC 2022 Call for Papers

Opening Remarks

  • Oral Session

  • Poster Session

  • Copper corrosion issue analysis and study on advanced cmp process

    Lei Zhang

    HLMC

    Galvanic Corrosion Caused by Device Structure in Chemical Mechanical Planarization

    Guilin Chen

    Zhejiang Hikstor Technology Co. Ltd

    Post CMP Cleaning Study Of Ceria Slurry

    Luping Liu

    Zhejiang Hikstor Technology Co. Ltd

    Effect of Oxone and Peroxodisulphates on the Chemical Mechanical Polishing Efficiency of C-plane GaN

    Yebo Zhu

    Hebei University of Technology

    Preparation of ZnO doped SiO2 Abrasive and Chemical Mechanical Polishing Performance on C-plane Sapphire Substrate

    Ziyang Hou

    Hebei University of Technology

    Analysis of Main Physical Factors of Chemical Mechanical Polishing About Lithium Tantalate

    Ye Li

    Hebei University of Technology

    CMP for packaging and CIS

    Angel Yang

    Applied Materials

    Effect of FA/O II Surfactant as a Complex Non-ionic Surfactant on Copper CMP

    Yinchan Zhang

    Hebei University of Technology

    Successful iAPC controlling for solution of Endpoint Missing and T-Put improvement in CMP

    Junjie Hu

    Applied Materials

    Multiscale Contact Behavior in CMP and its Correlation with Polishing Pad Properties

    Ping Zhou

    Dalian University of Technology

    Investigation of Factor Inducing Edge over Erosion during Chemical Mechanical Polishing

    Lixiao Wu

    Lanzhou University of Technology

    Research on the Formation of Sub-nano Depth Scratches on the Crystal Surface During Chemical Mechanical Polishing

    Han Xiaolong

    Dalian University of Technology

    Effects of surfactants on Cu-Co galvanic corrosion in post-CMP cleaning

    Wang Yazhen

    Hebei University of Technology

    Steady Clean for Stable Particle Performance Improvement

    Yunlong Wu

    Applied Materials

  • IAPC WiW control '150mm' Wafer Edge Profile

    Junyi Hu

    Applied Materials

    Enhancement of process stability by using HPPC

    Yongbin Wei

    Applied Materials

    Evo Head and WiW iAPC for ILD CMP Far Edge Profile Control

    Youlai Xiang

    Applied Materials China

    RTPC Algorithm Optimization to Eliminate Wafer Edge Residual for Cu CMP

    Yunhong Hou

    Applied Materials

    Effect of PASP Inhibitor on Cu-Co Galvanic Corrosion

    Haoran Li, Baoguo Zhang, Ye Li, Xiaofan Yang, Wei Wei, Zhaoxia Yang

    Hebei University of Technology

    Research on improvement of CMP thickness uniformity control on wafer edge defocus defects

    ZengyiYuan

    HLMC

    SAC CMP Uniformity of Selectivity Significant Improvement for 14 nm CMOS Process

    Guoan Wu

    Applied Materials (China), Inc.

    Preclean effective application for Poly film defect performance

    Jian Xiao

    Applied Materials

    Role of 1-H Carboxyl Benzotriazole as Corrosion Inhibitor for Cobalt "Bulk Step" CMP in H2O2 Based Alkaline Slurry

    Shuangshuang Lei

    Hebei University of Technology

    Effect of TTA-K as Inhibitor on Cu/Ru/TaN Structure based Patterned Wafer CMP

    Tian Yuan

    Hebei University of Technology

    Role of FA/O II Complexing Agent and BIT on Dishing and Erosion Reduction during Cu Barrier CMP

    Zhihui Cui

    Hebei University of Technology

    INVESTIGATION ON THE MATERIAL REMOVAL PROCESS OF COPPER BY A SINGLE PAD ASPERITY

    Haipeng Li

    Dalian University of Technology

    A Novel High-performance pad conditioner for 3D NAND STI CMP

    Mengxia Li

    Applied Materials

Sponsors:

© 2021 SEMI 云官网. All Rights Reserved.

19