Bioinspired in-sensor computing for artificial vision
Yang CHAI
The Hong Kong Polytechnic University
Symposium I: Device Engineering and Memory Technology
Symposium I: Device Engineering and Memory Technology
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Architectures and Chips of "Sensing with Computing" for Intelligent Continuous Perception
Fei Qiao
Tsinghua University
High Density Integrated Intrinsically Stretchable Electronics
Yuqing Zheng
Peking University
2D NEMS and 2D Electronics for Energy-Efficient Sensing and Computing
Rui Yang
University of Michigan-Shanghai Jiao Tong University Joint Institute
Memristor-based Reservoir Computing
Zhongrui Wang
University of Hong Kong
In-Memory Computing for Machine Intelligence
Bonan Yan
Peking University
Low Carbon Chips for Emerging Zeta-scale Computing
Hao Yu
Southern University of Science and Technology
Hardware-Based Neural Networks Using Flash Memory Technologies
Sungmin Hwang
Korea University Sejong Campus
Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory for Binary Neural Networks
Boyi Fu
Peking University
HFXZR1-XO2 FERROELECTRIC THIN FILM GRAIN SIZE TUNING VIA ANNEALING RAMP RATE ACHIEVING ENDURANCE >10^9 CYCLES, 2PR OF 40.6 µC/CM^2, WRITE VOLTAGE DOWN TO 1.5 V, AND SWITCHING SPEED OF 30 NS
Jun Lan
Southern University of Science and Technology
Hybrid 2D/CMOS Microchips for Memristive Applications
Mario Lanza
King Abdullah University of Science and Technology (KAUST)
High Performance Electronic Devices Based on Novel Materials for Logic and Memory Applications
Yanqing Wu
Peking University
Ferroelectric Devices as Next Generation Low-Power Logic Technology: NCFETs
Sihyun Kim
Sogang University
Functional circuits based on 2D semiconductors
Wenzhong Bao
Fudan University
Large Area CVD MoS2 Memristor Suitable For Neuromorphic Applications
Xuewei Feng
The Study on Reducing Bit line Parasitic Capacitance in Advanced DRAM
Yexiao Yu
ChangXin Memory Technologies(CXMT)
Low Temperature Ge CMOS for Future M3D Technology
Heng Wu
Peking University
Technologies for Superior Reliability in SiC Power Devices
Chi Min-hwa
SiEn (Qindao) Integrated circuits Cor.
Leakage Reduction of GAA Stacked Si Nanosheet CMOS Transistors and 6T-SRAM Cell via Spacer Bottom Footing Optimization
Xuexiang Zhang
Experimental Investigation of Ultra-low Temperature La2O3/HfO2 Bi-layer Dipole-first Process Using PVD Method for Advanced IC Technology
Yanzhao Wei
Institute of Microelectronics, Chinese Academy of Sciences
A Compact Sawtooth Wave Generator Based on Novel Z²-Fet Device
Hui Xie
Fudan University
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Fabrication and Characterization of a Novel Embedded Mirror Gate SONOS
Ning Wang
HHGrace
High endurance SONOS technology improved by design &process optimization
Pingsheng Zhou
HHGrace
Promoting Chip Probing Test Yield by Simple ISSG and Global Wet Process
Jingsong Peng
HHGrace
An On-chip Superconducting Quantum Transponder
Rutian Huang
Tsinghua University
Design and simulation of a superconducting switch based on weakly damped superconducting quantum interference devices
Xinyu Wu
Tsinghua University
Study of Breakdown Voltage improvement of High-voltage PLDMOS
Wenting Duan
HuaHong Grace Semiconductor Manufacturing Corporation
Study of the formation of Copper void defect and process optimization for reduction in dual damascene process
Hongliang Zhu
SMIC
Study on N-Type MOSCAP Capacitor and Range in 55nm CMOS
Hongliang Zhu
SMIC
INVESTIGATION OF A NEW DISTURB EFFECT IN THE AGGRESSIVELY SCALED DUAL-BIT/CELL SPLIT-GATE FLOATING-GATE FLASH CELL
Zhaozhao Xu
Huahong Semiconductor (Wuxi) Limited
Important Process Parameter and Its Sensitivity Check by Virtual Fabrication: Channel Hole Profile Impact on Advanced 3D NAND Structure
Wang Qingpeng
Coventor Inc., A Lam Research Company
FinFET Source/Drain Parasitic Resistance Optimization by TCAD Simulation
Tongtong Luan
ShanghaiTech University
Simulation Study of Gate-All-Around Nanosheet Devices Based on SOI Structure
Yangyang Hu
Shanghai University
Investigation of electrical characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2 for Dynamic Random Access Memories
Kun Zhong
Institute of Microelectronics, Chinese Academy of Sciences
Investigation of the doping profile for ion implants and rapid annealing in silicon via an improved method
Zeqi Zha
SMIC
Novel Channel-On-Fin (COF)IGZO-TFTs with Ultra-Scaled Back Gate Length of 23 nm
Shangbo Yang
Institute of Microelectronics, Chinese Academy of Sciences
Investigation of vertical channel IGZO-TFT based on PVD-IGZO
Zhiyu Song
Institute of Microelectronics, Chinese Academy of Sciences
A Compact Model of Non-volatile Ferroelectric Tunnel FET with Ambipolarity for In-memory-computing
Hanyong Shao
Peking University
Investigation of Synergic Hydrogen Mitigation Technique for Top-Gate a-IGZO Thin-Film Transistors
Gangping Yan
Beijing Superstring Academy of Memory Technology北京超弦存储器研究院
Characterization of Field Cycling Fatigue in HfZrOx Ferroelectric Capacitors
Puyang Cai
Peking University
Reliability Performance of Novel Tunneling Field Effect Transistors Based on Foundry Platform
Yukun Tang
Shanghai Jiaotong University
Influence of Interfacial Layers and High-k Post Dielectric Annealing on the Characteristics of MOS Devices
Guanqiao Sang
Institute of Microelectronics, Chinese Academy of Sciences
SILICIDE PROFILE OPTIMIZATION ON ACTIVE AREA IN 4XNM ETOX NOR FLASH MEMORY
Yuxin Tong
HHGrace
Improvement of Standby current failure by device optimization on 4Xnm ETOX NOR-flash memory
Zhuangzhuang Wang
HHGrace
Effects of floating gate profile on Cell Characteristics of 4Xnm FG-first ETOX NOR-flash memory
Yihang Du
HHGrace
Improved Environmental Stability of N-type Polymer Field-Effect Transistors using Nickel Contact Electrodes
Yuan Liu
Nanjing University of Posts and Telecommunications