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Symposium IV: Thin Film, Plating and Process Integration

Symposium IV: Thin Film, Plating and Process Integration

Virtual Conference Registration
  • Conference Agenda
  • CSTIC 2023 Call for Papers

Opening Remarks

  • Xiaoping Shi

    Naura

    View
  • Oral Session

  • Poster Session

  • Cell structure and process integration of a novel 2T0C technology for high-density DRAM application

    Zhengyong Zhu

    Beijing Superstring Academy of Memory Technology

    Pathfinding by different process integration scheme: Advanced DRAM bit-line spacer process integration skim evaluation using virtual fabrication

    Dempsey Deng

    Lam Research

    Carbon Gap Fill in Reversed Self-Aligned Double Patterning

    Guanfeng Lu

    Lam Research

    Atomic Scale Engineering: An outlook of ALD Applications and Localization

    Weiming Li

    Jiangsu Leadmicro Nano-Equipment Technology Ltd.

    Study of Slip Defects and Improving Methods in Furnace High Temperature Process

    Yan Sun

    NAURA

    Surface Process Development for High-performance GaN HEMTs Fabrication

    Min Xu

    Fudan University

    Precursor Selection for ALD High-k Films in Memory Applications

    Jianheng Li

    Hefei ADChem Semi-Tech. Co., Ltd.

    Si and SiGe Heteroepitaxy for Semiconductor Quantum Computing

    Guilei Wan

    Beijing Superstring Academy of Memory Technology

    High Mobility SiGe/Ge Channel Transistors for Advanced CMOS Technology

    Yi Zhao

    East China Normal University

    A Novel Method to Optimize SiGe Profile Using Co-implantation

    Zhiqiang Xiao

    Semiconductor Manufacturing North China (Beijing) Corporation(SMNC)

    Pulsed DC parameters (Reverse Voltage, Duty Cycle, Pulsed Frequency) on Film quality in reactive sputtered aluminum nitride films

    Wei-Yu Zhou

    National Central University

    The effect of SiGe SiCoNi pre-clean time on planner logic device performance study

    Xuechun Zhang

    SMNC

    Growth and Reduction of Tiny defect in Selective SiGe Epitaxy S/D Devices

    CunZhe He

    SMNC

    Influence of ion implantation on void defect formation in epitaxially grown silicon

    Zeqi Zha

    SMIC

    Some key modifications of theory required to understand the leakage current mechanisms for ferroelectric HfZrO capacitors used in microelectronics

    Wai Shing Lau

    Nanyang Technological University

    Lau’s unified Schottky-Poole-Frenkel theory with asymmetric distortion by electron charge trapping proposed to explain the current-voltage characteristics of high-k metal-insulator-metal capacitors

    Wai Shing Lau

    Nanyang Technological University

    The Study of Silicon Nitride Films Deposited in Batch ALD System

    Shiyao Cheng

    Beijing NAURA Microelectronics Equipment Co., Ltd

  • Surface Roughness Reduction of PECVD SiNX Film

    Xiaochen Wang

    Piotech Inc.

    Mechanical Properties of Flip-chip Bonding Structures for Micro-LED Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding

    Kefeng Wang

    Shanghai University

    WN Barrier Simulation for Electrical Improvement in Small CD BEOL vias Application

    Zhengning Gao

    Lam Research

    Virtual DOE-assisted DTI Airgap Optimization

    Cherry Xu

    Lam Research Service Co. Ltd.

    Electroplating Process Improvement on Post-CMP Dishing Profile

    Joey Hu

    Lam Research

    Effect of Sub-Atmospheric Chemical Vapor Deposition SiO2 Film Deposition Process on Surface Chemistry Sensitivity

    Jianan Wei

    Piotech

    Gas distribution effect on AlN thin film Thickness Non-uniformity

    Xiaomeng Liu

    Piotech

    Substrate Effect on Thermal ALD AlN thin film Gwoth Rate

    Xiaomeng Liu

    Piotech

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