Improving 300mm Si wafer planarization process with a wholistic approach
Weiming Li
Jiangsu Leadmicro Nano-Equipment Technology Ltd.
Symposium V: CMP and Post CMP Cleaning
Symposium V: CMP and Post CMP Cleaning
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Research on Surface Planarization Technology for Silicon Wafers
Weili Liu
Shanghai institute of microsystem and information
SIN Residue Improvement for ILD0CMP
Yurong Que
HLMC
Chemical mechanical polishing of cobalt with reduce copper/cobalt with reduced copper/cobalt galvanic corrosion in alkaline slurry
Chuanyun Wan
Shanghai Institute of Technology
Some Methods to Reduce Tiny Scratch Defect for Via Contact Tungsten Chemical Mechanical Planarization Process
Le Ning
Semiconductor Manufacturing North China (Beijing) Corporation
Slurry System Establishment and Optimization for Advanced Cobalt Interconnects
Lifei Zhang
Tsinghua University
Analysis of the Adsorption and Passivation Mechanism of JFCE on Copper Surface in Alkaline CMP Slurry
Ni Zhan
Hebei University of Technology
Research Progress and Challenges of Chemical Mechanical Polishing Technology of Silicon Carbide Wafer
Lijuan Zhang
Shanghai Xin Qian Semiconductor Co. Ltd
High Efficiency Polishing of Silicon Carbide by Applying Reactive Non-Aqueous Fluids to Fixed Abrasive Pads
Jiapeng Chen
Shanghai University of Engineering Science
The Challenge and Solution for Advanced Node Post Cu CMP Cleaning
Bing Liu
Anji Microelectronics Technology(Shanghai) Co., Ltd
Research on the Dispersion Stability and Polishing Performance of Cerium Oxide Slurry
Min Liu
Hebei University of Technology
A FEM Model of Micro-galvanic Corrosion Evolution at Ru/Cu Interface in H2O2 CMP Solution
Jie Cheng
China University of Mining & Technology-Beijing
Effect of abrasive on the CMP performance of c-plane (0001) GaN flim
Jianghao Liu
Hebei University of Technology
Effect of Surfactants on CMP Properties of M-plane Sapphire
Yida Zou
Hebei University of Technology
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Study on the Slurry for Chemical Mechanical Polishing of Sapphire Wafer
Wenhao Xian
Hebei University of Technology
Si Polishing and Flatness Control Study for 300mm Wafer Manufacturing
Yunhong Hou
Applied Materials China
WTW APC on STI CMP process control
Yuan Li
Applied Materials China
Enhance Stability of Endpoint Detection System on STI CMP
Mengyao Liu
Applied Materials China
Effects of Process to Material Removal in CMP: Modelling and Experiments
Yanming Ren
Shanghai Institute of IC Materials