首页集成电路科学技术大会大讲堂招聘

English

Symposium I: Device Engineering and Memory Technology

Opening Remarks

Oral Session
Poster Session

Implementation of Spintronic MRAM Circuits and Systems

Hao Cai

Southeast University

Defect tolerant physics-inspired computing in memristor arrays

Can Li

University of Hong Kong

Multifunctional RRAM Chip with Configurability for Sparsity-aware In-memory Isng Machine

Wenshuo Yue

Peking University

A method of scalable polysilicon resistor by adjusting shielding metal in CMOS process

Hunjin Lee

X-FAB

A 110nm BCD-on-SOI Technology offering Best-In-Class Nonvolatile Memory IP for Automotive Application

Boon Jiew Chee

X-FAB Sarawak Sdn. Bhd.

2D devices and in-sensor computing

Feng Miao

Nanjing University

SRAM based Compute-in-Memory Circuits Design for CNN and Transformers

Xin Si

Southeast University

All-dielectric metasurfaces for vortex generation and Detection

Shumin Xiao

Harbin Institute of Technology

Analog Device Engineering and Enhancement in 0.18um BCD on SOI Technology Platform

Poh Ching Sim

X-FAB Sarawak Sdn. Bhd

Innovative Test Solution Design and Production Practices for Automotive Based on ADVANTEST 93K

Jibao Fan

Advantest (China) Co., Ltd

2D Material Devices for Advanced Computing

Han Wang

University of Hong Kong

A Full Spectrum of Computing-In-Memory Technologies

Zhong Sun

Peking University

Inflection Points in CFET Scaling: Impact of DTCO Boosters

Dmitry Yakimets

Huawei Technologies R&D Belgium

Ultrathin TiO2 channel HfLaO FeFET with Low Operation Voltage

Xujin Song

Peking University

Enhance Chip Connectivity and Functionality through RRAM-based Monolithic 3D Integration

Jianshi Tang

Tsinghua University

Single Element Switch

Min Zhu

Shanghai Institute of Microsystem and Information Technology

First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HfO2-based ferroelectrics

Chenxi Yu

Peking University

Low Frequency Noise and Hot Carrier Degradation Characteristics on 55nm LP Platform

Gang Wang

Hangzhou HFC Semiconductor Corporation

A Novel Ultralow Voltage Slope Device

Pengtao Li

Zhejiang University

Experimental Investigation of Polarization Switching Speed in Ferroelectric HfO2 for High-Speed and Low-Power Applications

Hao Zheng

Peking University

A Novel Hybrid-Channel Gate-All-Around Nanosheet Transistor For Leakage Control And Subthreshold Slope Reduction

Yumin Xu

Fudan University

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Pan Zhao

Peking University

High endurance field-effect transistor memory based on Hafnium-oxide ferroelectrics

Kechao Tang

Peking University

Interface Treatment of Epitaxial Si FinFET Channel in Replace Metal Gate with Simultaneously Performance Improvement and Leakage Reduction

Renjie Jiang

Institute of Microelectronics of the Chinese Academy of Sciences

Experimental Investigation on the Back Gate Modulation of Extra-Thin Body pMOSFETs

Rui Su

Zhejiang University

Impact Of Thickness Dependent Ferroelectric And Interface Charge Variation On Device-To-Device Variation In Ferroelectric FET

Fan Zhang

Xidian University/ IMECAS
A Novel Approach for Doping Two-Dimensional MoS2 Materials: ZnO Polar Interfacial Charge Transfer Method

Lijun Xu

Institute for Microelectronics, Chinese Academy of Science

Machine Learning-based Performance Prediction Model Optimization for SOI LDMOS Using Adaptive Small Space Dataset

Jinwen You

Nanjing University of Posts and Telecommunications

HBM Device Test & Repair Solution on T5833

Xiang Ling

Advantest (China) Co., Ltd.

SUBSTRATE CURRENT IMPROVEMENT AND INVESTIGATION IN LOW VOLTAGE POWER LDMOS WITH A NOVEL DESIGN

Zhaozhao Xu

Huahong Semiconductor (Wuxi) Limited

Short-Loop Method to Shorten Gate Process Characterization Cycle Time

Bing Li

HangZhou HFC Semiconductor Corp.

Enhancement of SRAM Read and Write Noise Margin by Device Performance Adjustment

Ailin Li

Semiconductor Manufacturing North China (Beijing) Corporation (SMNC)

FABRICATION PROCESS IMPROVEMENT OF AGGRESSIVELY SCALED DUAL-BIT/CELL SPLIT-GATE FLOATING-GATE FLASH CELL

Yintong Zhang

Huahong Semiconductor (Wuxi) Limited

Anomalous Hot carrier injection induced degradation of drain current in HVMOS with STI

Bocheng Zhao

Shanghai University

Study of Improvement for substrate current in High-Voltage NMOS with Shallow Trench Isolation

Bocheng Zhao

Shanghai University

A comprehensive solution to parse, compare, convert, and compile TST pattern

Weilong Li

Teradyne

A new method for improving 8V ESD performance

Chuang Wang

Shanghai Huali Microelectronics Corporation

Fabrication of Three-Side-Around Control Gate of Semi-Floating Gate Transistor

Shiling Yang

Shanghai Huali Integrated Circuit Corporation

Threshold Voltage Mismatch Dependence of SRAM Yield Window Simulation

Chun-Hsiung Wang

HFC Semiconductor

Optimization of the 8T SRAM bitcell design

Lu-Ping Wu

HFC Semiconductor

Effect of lightly doped drain doping on variability for static random-access memory

Qiao Teng

Zhejiang University

A photoelectric memristive devices for Artificial visual perception

Xuemeng Fan

Zhejiang University

Al2O3/AlOx Memristor with Nearly Ideal Synaptic Characteristics

Qian He

Zhejiang University

Two-Dimensional MoS2 Based Memristors For Artificial Neural Network

Hailiang Wang

Zhejiang University

Static leakage failure analysis and improvement for small size SRAM

Minghui Zhu

Shanghai Huali Microelectronics Corporation

The Modeling and optimization of the Polysilicon Gate Line Width Roughness for Improving the Performance of 55nm CMOS devices

Yaoting Wang

Zhejiang University

Virtual Fab Semiconductor Process Modeling Augmented Vertical Gate All Around Complementary FET based 6T SRAM path-finding

Zhaohai Di

Institute of Microelectronics, Chinese Academy of Sciences

Novel Memtransistor-based LIF Neuron with Tunable Ionic Dynamics for Spiking Neural Networks

Zhen Yang

Peking University

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric FET

Chang Su

Peking University

A STUDY OF PARASITIC CAPACITANCE SIMULATION IN DRAM BY VIRTUAL FABRICATION

Dempsey Deng

Lam Research

Benefits of Applied VSE High Current Implanters for White Pixel Reduction in Image Sensors

Shasha Wang

Applied Materials

Leakage Reduction Evolution With Gate Oxide Scaling

Yongchun Xuan

Applied Materials

Cost Effective Low Temperature Annealing Achieved by Producer Pyra

Yang Liu

Applied Materials

Device performance (leakage & Rc) improvement by Trident XP CrionTM

Yuhang Jin

Applied Materials

Effective Tuning Knobs for High Current Implant Uniformity Optimization

Jinsong Lin

Applied Materials

Trident N/C co-implant for LDD dopant diffusion control

Zuoliang Han

Applied Materials

Solution-Processed Organic CMOS Inverter Via Contact Modulation

Jiarong Cao

Nanjing University of Posts and Telecommunications

Ultra-Short Channel Polymer Transistors

Zhiqi Xu

Nanjing University of Posts and Telecommunications

Exploring Low-Frequency Noise Behavior in Vertically Structured Organic Schottky Photodiodes

Tingting Ji

Nanjing University of Posts and Telecommunications

Flexible Low-Voltage, Hysteresis-Free Ferroelectric Polymer Transistors

Yao Yu

Nanjing University of Posts and Telecommunications

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Symposium I: Device Engineering and Memory Technology

Symposium I: Device Engineering and Memory Technology

Opening Remarks

Oral Session

Poster Session

Implementation of Spintronic MRAM Circuits and Systems

Defect tolerant physics-inspired computing in memristor arrays

Multifunctional RRAM Chip with Configurability for Sparsity-aware In-memory Isng Machine

A method of scalable polysilicon resistor by adjusting shielding metal in CMOS process

A 110nm BCD-on-SOI Technology offering Best-In-Class Nonvolatile Memory IP for Automotive Application

2D devices and in-sensor computing

SRAM based Compute-in-Memory Circuits Design for CNN and Transformers

All-dielectric metasurfaces for vortex generation and Detection

Analog Device Engineering and Enhancement in 0.18um BCD on SOI Technology Platform

Innovative Test Solution Design and Production Practices for Automotive Based on ADVANTEST 93K

2D Material Devices for Advanced Computing

A Full Spectrum of Computing-In-Memory Technologies

Inflection Points in CFET Scaling: Impact of DTCO Boosters

Ultrathin TiO2 channel HfLaO FeFET with Low Operation Voltage

Enhance Chip Connectivity and Functionality through RRAM-based Monolithic 3D Integration

Single Element Switch

First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HfO2-based ferroelectrics

Low Frequency Noise and Hot Carrier Degradation Characteristics on 55nm LP Platform

A Novel Ultralow Voltage Slope Device

Experimental Investigation of Polarization Switching Speed in Ferroelectric HfO2 for High-Speed and Low-Power Applications

A Novel Hybrid-Channel Gate-All-Around Nanosheet Transistor For Leakage Control And Subthreshold Slope Reduction

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

High endurance field-effect transistor memory based on Hafnium-oxide ferroelectrics

Interface Treatment of Epitaxial Si FinFET Channel in Replace Metal Gate with Simultaneously Performance Improvement and Leakage Reduction

Experimental Investigation on the Back Gate Modulation of Extra-Thin Body pMOSFETs

Impact Of Thickness Dependent Ferroelectric And Interface Charge Variation On Device-To-Device Variation In Ferroelectric FET

A Novel Approach for Doping Two-Dimensional MoS2 Materials: ZnO Polar Interfacial Charge Transfer Method

Machine Learning-based Performance Prediction Model Optimization for SOI LDMOS Using Adaptive Small Space Dataset

HBM Device Test & Repair Solution on T5833

SUBSTRATE CURRENT IMPROVEMENT AND INVESTIGATION IN LOW VOLTAGE POWER LDMOS WITH A NOVEL DESIGN

Short-Loop Method to Shorten Gate Process Characterization Cycle Time

Enhancement of SRAM Read and Write Noise Margin by Device Performance Adjustment

FABRICATION PROCESS IMPROVEMENT OF AGGRESSIVELY SCALED DUAL-BIT/CELL SPLIT-GATE FLOATING-GATE FLASH CELL

Anomalous Hot carrier injection induced degradation of drain current in HVMOS with STI

Study of Improvement for substrate current in High-Voltage NMOS with Shallow Trench Isolation

A comprehensive solution to parse, compare, convert, and compile TST pattern

A new method for improving 8V ESD performance

Fabrication of Three-Side-Around Control Gate of Semi-Floating Gate Transistor

Threshold Voltage Mismatch Dependence of SRAM Yield Window Simulation

Optimization of the 8T SRAM bitcell design

Effect of lightly doped drain doping on variability for static random-access memory

A photoelectric memristive devices for Artificial visual perception

Al2O3/AlOx Memristor with Nearly Ideal Synaptic Characteristics

Two-Dimensional MoS2 Based Memristors For Artificial Neural Network

Static leakage failure analysis and improvement for small size SRAM

The Modeling and optimization of the Polysilicon Gate Line Width Roughness for Improving the Performance of 55nm CMOS devices

Virtual Fab Semiconductor Process Modeling Augmented Vertical Gate All Around Complementary FET based 6T SRAM path-finding

Novel Memtransistor-based LIF Neuron with Tunable Ionic Dynamics for Spiking Neural Networks

New Insight into Impacts from Read Cycle Number and Voltage Sweeping Direction on Memory Window of Ferroelectric FET

A STUDY OF PARASITIC CAPACITANCE SIMULATION IN DRAM BY VIRTUAL FABRICATION

Benefits of Applied VSE High Current Implanters for White Pixel Reduction in Image Sensors

Leakage Reduction Evolution With Gate Oxide Scaling

Cost Effective Low Temperature Annealing Achieved by Producer Pyra

Device performance (leakage & Rc) improvement by Trident XP CrionTM

Effective Tuning Knobs for High Current Implant Uniformity Optimization

Trident N/C co-implant for LDD dopant diffusion control

Solution-Processed Organic CMOS Inverter Via Contact Modulation

Ultra-Short Channel Polymer Transistors

Exploring Low-Frequency Noise Behavior in Vertically Structured Organic Schottky Photodiodes

Flexible Low-Voltage, Hysteresis-Free Ferroelectric Polymer Transistors