CMP equipments and application technologies for advanced manuafacturing process
Xinchun Lu
Tsinghua University
Symposium V: CMP and Post CMP Cleaning
Symposium V: CMP and Post CMP Cleaning
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CMP Technology for More than Moore Innovation
Haedo Jeong
Pusan National University
New methodology for anisotropic nanoparticles characterization by polarization light scattering: length and diameter determination of rod-like nanoparticles
David Jacob
Cordouan Technology
Ceria slurry applications to STI, ILD and advanced packaging CMP
Yuchun Wang
Anji microelectronics
CeO2 slurry post rinse condition research in STI CMP technology
Zhengyi Li
Semiconductor Manufacturing North China (Beijing) Corp
INCOMING IMPACT ON DISHING IMPROVEMENT IN FEOL PROCESS
Huize Du
Shanghai Huali Integrated Circuit Corporation, Shanghai, China
Positively charged ceria particles cleaning by HCOOH-H2O2-DIW solution
Wenlong Tang
Fudan University
Study on the dispersing effect and mechanism of LABSA on SiO2 in an alkaline barrier slurry
Fangyuan Wang
Hebei University of Technology
Mechanism Research and Improvement of AL Scratch Defect Based on MG CMP
Qingqing Duan
Shanghai Huali Integrated Circuit Corp
Cu post CMP cleaner development utilizing AI system
Atsushi Mizutani
Fujifilm corporation
Effect of Green Corrosion Inhibitors on the Performance of Copper-Cobalt CMP
Chao He
Institute of Microelectronics, Hebei University of Technology
Effect of Green Additive Sarcosine as Inhibitor for Cobalt-Based Copper Interconnect CMP
ChangXin Dong
Hebei University of Technology
The development progress of new high-efficiency silicon carbide substrate polishing slurry
Xiuyan Sun
Zhangjiagang Anchu Technology Ltd
Research on the electro-fenton magnetorheological finishing technology for GAN wafer
Qiusheng Yan
Guangdong University of Technology
Study on the Slurry for Chemical Mechanical Polishing of GaN Wafer
Steve Liu
Hebei University of Technology
CMP characteristics of IGZO thin film with a variety of process parameters
Ming Zeng
Beijing Superstring Academy of Memory Technology, Beijing, China
Study on the Processing Characteristics and Polishing Technology of Easily Cleavable Gallium Oxide Crystals
Hai Zhou
Yancheng Institute of Technology
Chemical Effect Mechanism in Chemical Mechanical Polishing of Silicon Wafer
Chenwei Wang
Jiangsu Shanshui Semiconductor Technology Co., Ltd
EOE evolution processes of same step profile in CMP with different one-material polishing time
LIXiao Wu
Lanzhou University of Technology
Effect of Surfactants on CMP Properties of C-, A- and R-plane Sapphire
Xinjie Li
Hebei University of Technology
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A Novel Endpoint System Application On DRAM W CMP Application
Lin Wang
Applied Materials
Study on Ceria Slurry for Chemical Mechanical Polishing of 4H-SiC
Sihui Qin
Hebei University of Technology
Multiple approaches to achieve high throughput of Cu CMP process in LK 3 platens platform
Jiaming Xu
Applied Materials
Achieved World-Class BSI Si CMP TTV Performance via FVXE NIR® MPC System
Likun Cheng
Applied Materials
Study on chemical-mechanical synergies in polishing of ruthenium
Hongyu Di
Dalian University of Technology
Effects of Polyvinyl Alcohol on Silicon Chemical Mechanical
Shuangshuang Lei
Hebei University of Technology
RTPC XE for 28nm BEOL Cu CMP
Youlai Xiang
Applied Materials (China), Inc. China
China 1st RTPC X/Fullscan X implemented in LK Metal CMP
Zhenxing Song
Applied Materials (China)
The Precise Profile Control of RTPC X in CIS Cu CMP
Mengxia Li
Applied Materials
Micro-Scratch Defect Improvement for CMP Process
Kun Zhang
Applied Material